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Controlling structural properties of positioned quantum dots

Identifieur interne : 001001 ( Main/Repository ); précédent : 001000; suivant : 001002

Controlling structural properties of positioned quantum dots

Auteurs : RBID : Pascal:13-0181756

Descripteurs français

Pascal (Inist)
- Point quantique, Nanomatériau, Recuit, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Microscopie force atomique, Microscopie électronique balayage, Mécanisme croissance, Nombre quantique, Loi probabilité, Synthèse nanomatériau, Croissance sélective, Lithographie faisceau électron, Epitaxie jet moléculaire, InAs, Substrat GaAs, 8107T, 8107, 8110A, 8116.

English descriptors

KwdEn :
- Annealing, Atomic force microscopy, Electron beam lithography, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Nanomaterial synthesis, Nanostructured materials, Probability distribution, Quantum dots, Quantum numbers, Scanning electron microscopy, Selective growth.

Abstract

The effects of in situ annealing on positioned InAs quantum dots grown on pre-structured GaAs substrates were investigated. Atomic force microscopy and scanning electron microscopy data were used to analyze the evolution of quantum dots during post growth annealing. Two different annealing regimes are found which allow for increasing or decreasing the quantum dot size. The shape of the initially elongated QDs becomes more symmetric during annealing. Furthermore, the number of quantum dots per site can be controlled by annealing time. Additionally, it is found that the width of the occupation probability distribution decreases during annealing. The results are discussed and compared to annealing experiments with self-assembled quantum dots.

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<author><name sortKey="Helfrich, Mathieu" uniqKey="Helfrich M">Mathieu Helfrich</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Karlsruher Institut für Technologie (KIT), DFG-Center für Funktionelle Nanostrukturen (CFN), Wolfgang-Gaede-Straμe 1a</s1>
<s2>76131 Karlsruhe</s2>
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<author><name sortKey="Terhalle, Bernd" uniqKey="Terhalle B">Bernd Terhalle</name>
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<s2>5232 Villigen PSI</s2>
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<author><name sortKey="Ekinci, Yasin" uniqKey="Ekinci Y">Yasin Ekinci</name>
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<author><name sortKey="Schaadt, Daniel M" uniqKey="Schaadt D">Daniel M. Schaadt</name>
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<front><div type="abstract" xml:lang="en">The effects of in situ annealing on positioned InAs quantum dots grown on pre-structured GaAs substrates were investigated. Atomic force microscopy and scanning electron microscopy data were used to analyze the evolution of quantum dots during post growth annealing. Two different annealing regimes are found which allow for increasing or decreasing the quantum dot size. The shape of the initially elongated QDs becomes more symmetric during annealing. Furthermore, the number of quantum dots per site can be controlled by annealing time. Additionally, it is found that the width of the occupation probability distribution decreases during annealing. The results are discussed and compared to annealing experiments with self-assembled quantum dots.</div>
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Controlling structural properties of positioned quantum dots

Controlling structural properties of positioned quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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